New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors

• AgBr
• AgClx-Br1-x: lattice constants
• AgClx-Br1-x: bulk modulus
• AgBrxI1-x: ionic conductivity, dielectric permittivity
• AgCl
• Ag1-xCuxI: phase transition temperature
• Ag1-xCuxI: lattice constants
• AgxCu1-xI: ionic conductivity, dielectric permittivity
• AgF
• AgI
• AlAs
• AlxGa1-xAs: energy gap
• AlxIn1-xAs: impact ionization coefficients
• InxAl1-xAs: critical point energies
• Al1-xMnxAs: crystal structure, lattice parameters
• Al1-xMnxAs: conductivity
• Al1-xMnxAs: magnetic phases
• AlN
• AlP
• AlSb
• BAs
• Ga1-xCrxAs: crystal structure, lattice parameter
• Ga1-xCrxAs: band structure, density of states
• Ga1-xCrxAs: conductivity
• Ga1-xCrxAs: magnetic phases, Curie temperature, magnetic circular dichroism
• Ga1-xFexAs: crystal structure, lattice parameter
• Ga1-xFexAs: conductivity, mobility, magnetoresistance
• GaAs
• GaxIn1-xAs: energy gaps
• GaInAs: micro hardness
• GaxIn1-xAs: absorption coefficient
• GaxIn1-xAs: impact ionization coefficients
• GaxIn1-xAsyP1-y: micro hardness
• GaPyAs1-y: energy gaps
• InAs
• InAsxSb1-x: critical point energies
• InAsxSb1-x: dielectric constant
• InAsxSb1-x: effective-mass parameters
• BN
• BP
• BSb
• CuClx-Br1-x: lattice constants
• CuClx-Br1-x: bulk modulus
• CuBr
• CuBrx-I1-x: lattice constants
• CuBrx-I1-x: bulk modulus
• C
• SiC
• Cd1-x-yMnxCryTe: magnetization
• Cd1-xMgxSe: absorption, two-photon absorption, nonlinear optical constants
• CdO
• CdSeS: impurity complexes
• CdSe
• CdTe
• CuCl
• CuClx-I1-x: lattice constants
• CuClx-I1-x: bulk modulus
• Zn1-xCoxO: lattice parameters
• Zn1-xCoxO: energy gap, exciton energy
• Ga1-xCrxSb: crystal structure
• Ga1-xCrxSb: conductivity, magnetoresistance, Hall resistivity
• Ga1-xCrxSb: magnetic phases
• CuF: ionicity
• CuI
• Pb1-xEuxSe: lattice parameter
• Pb1-xEuxSe: energy gaps
• Pb 1-x Eu x Se: g-factors of magnetic ions
• Pb1-xEuxTe: photoluminescence spectra
• Pb1-xEuxTe: magnetoresistance
• Pb1-xEuxTe: inelastic scattering time
• GaxIn1-xP: energy gaps
• GaxIn1-xSb: effective-mass parameters
• Ga1-xMnxS: phase transitions
• GaN
• GaP
• GaSb
• Pb1-xGdxTe: micro hardness
• Pb1-xGdxTe: specific heat
• Sn1-xGdxTe: lattice parameter
• Sn1-xGdxTe: magnetization
• Sn1-xGdxTe: exchange integrals
• Ge
• Ge1-xMnxTe: interatomic distances
• Ge1-xMnxTe: density of states, Fermi energy
• Ge1-xMnxTe: absorption
• Ge1-xMnxTe: resistivity
• Ge1-xMnxTe: magnetoresistance
• Ge1-xMnxTe: phase coherence length
• Ge1-xMnxTe: Hall resistivity
• Ge1-xMnxTe: magnetization
• Ge1-xMnxTe: Curie temperature
• Si-Ge: phonon frequencies, phonon density of states
• In1-xMnxSb: spin polarization, conductivity
• InN
• InP
• InSb
• Diluted magnetic oxides: magnetic properties
• Mg1-xMnxTe: energy gap
• Mg1-xMnxTe: exchange constants
• Mg1-xMnxTe: phase diagram
• Zn 1-x Mg x Se: refractive index
• Zn 1-x Mg x Se: absorption, two-photon absorption, nonlinear optical constant
• Zn 1-x Mn x Te 1-y O y : band structure
• Zn1-xMnxTe1-yOy: lattice parameter
• Zn 1-x Mn x O: energy gap
• Zn1-xMnxO: lattice parameters
• Pb1-xMnxSe: energy gaps
• Pb1-xMnxSe: refractive index
• Pb1-xMnxSe: dielectric constant
• Pb 1-x Mn x Se: transmission, absorption coefficient, Urbach bandtail parameter
• Pb1-xMnxTe: interatomic distances
• Pb1-xMnxTe: phonon modes
• Pb1-xMnxTe: reflectivity
• Pb1-xMnxTe: resistivity, mobility, carrier concentration, impedance
• ZnO
• ZnS
• ZnSe
• Si
• ZnTe