New Data and Updates for III-V, II-VI and I-VII Compounds
- AgBr
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AgIxBr1–x: electrical conductivity, thermoelectric power
- AgCl
- AgF
- AgI
- AlAs
- Al(Ga, As)
- (Al, Ga)As
- (Al, Ga, In)As
- (Al, Ga)(As, Sb)
- (Al, In)As
- (Al, Mn)As
-
AlAsxSb1–x: thermal conductivity
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AlxGayIn1–x–yP: bond length
- (Al, Ga)P
- (Al, Ga)(P, Sb)
- (Al, In)(P, Sb)
- B(Ga, As)
- (B, Ga, In)As
- Ga(As, Bi)
-
BxIn1–xAs: lattice parameter
- (Ga, Cr)As
- (Ga, Fe)As
- GaAs
- (Ga, In)As
- (Ga, In)(As, P)
- (Ga, In)(P, Sb, As)
- (Ga, In)(As, Sb)
- (Ga, Mn)As
- Ga(As, Sb)
- InAs
- (In, Mn)As
-
InxAs1–xSb: transverse effective charge
- In(As, Sb)
-
InBixSb1–x: transverse effective charge
- Cu(Cl, Br)
- CuBr
- (Hg, Cd, Mn, Zn)Te
- (Hg, Cd)Te
- CdO
- (Zn, Cd)O
- CdS
- CdSe
-
Sn1–xCdxTe: hardness
-
ZnxCd1–xS: energy gaps
-
Cd1–xZnxS: resistivity
- CdTe
- (Cd, Zn)Te
- CuCl
- CuF
- CuI
- SiC
- Ga(In, P)
- (Ga, Mn)Sb
-
GaP: phonon density of states
- (Hg, Mn)Te
- HgS
- HgSe
- HgTe
- (Hg, Zn)Te
- (In, Mn)Sb
- In(P, Sb)
- InSb
-
MgyZn1–yTe1–xSex: energy gaps
-
Zn1-xMgxTe: energy gaps, bowing parameter
-
Zn1–xMgxSe: absorption
-
ZnSe1–xOx: exciton energies, exciton binding energies
-
ZnSxO1-x: energy gaps, bowing parameter
- ZnO
- ZnSe
- Zn(S, Se)
-
ZnS1-xTex: bound excitons
- ZnS
- ZnTe


