Semiconductors · Semiconductors · New Data and Updates for III-V, II-VI and I-VII Compounds

• AgBr: heat capacity
• AgBr: thermal conductivity, thermal diffusivity
• AgBr: heat of sublimation
• AgBr: effective masses
• AgBr: lattice constants
• AgBr: lattice constants
• AgBr: mean square relative displacements
• AgBr: bulk moduli, elastic constants
• AgBr: compressibility, bulk modulus
• AgBr: phonon dispersion
• AgBr: Debye-Waller factor
• AgBr: elastic moduli
• AgBr: dielectric function
• AgIxBr1−x: electrical conductivity, thermoelectric power
• AgCl: heat capacity
• AgCl: heat of sublimation
• AgCl: thermal conductivity, thermal diffusivity
• AgCl: band structure, electron density of states
• AgCl: effective masses
• AgCl: energy gaps, density of states
• AgCl: lattice constants
• AgCl: lattice constants
• AgCl: phonon dispersion
• AgCl: bulk moduli, elastic constants
• AgCl: compressibility, bulk modulus
• AgCl: elastic moduli
• AgCl: Debye-Waller factor
• AgCl: dielectric function
• AgCl: impurity g-factors, hyperfine structure constants
• AgF: lattice constants
• AgF: heat of sublimation
• α-AgI: bulk moduli
• α-AgI: lattice constants
• β-AgI: mean square relative displacements
• AgI: phase transitions, p-T phase diagram
• AgI: heat of sublimation
• AgI: lattice constants
• AgI: compressibility, bulk modulus
• AgI: phonon dispersion
• AgI: Debye-Waller factor
• AgI: elastic moduli, mode Grüneisen parameters
• α-AgI: ion diffusion coefficient
• AlAs: dielectric constant, refractive index
• AlAs: direct and indirect energy gaps
• AlAs: effective mass parameters
• AlAs: electron density of states, energies at symmetry points
• AlAs: energy gaps
• AlGaxAs1−x: heat capacity
• AlGaxAs1−x: linear thermal expansion coefficient
• AlGaxAs1−x: thermal conductivity, thermal diffusivity
• AlxGa1−xAs: crossover composition energy at symmetry points
• AlxGa1−xAs: electron self energy, electron broadening parameter
• AlxGa1−xAs: lattice constant
• AlxGa1−xAs: elastic constants, Poisson ratio
• AlxGa1−xAs: refractive index, dielectric constant
• AlxGayIn1−x−yAs: bond length
• AlxGayIn1−x−yAs: energy gap
• AlxGayIn1−x−yAs: Raman spectra
• AlxGayIn1−x−yAs: hole mobility
• AlxGayIn1−x−yAs: photoluminescence linewidth
• AlxGa1−xAsySb1−y: internal strain parameter
• AlxGa1−xAsySb1−y: thermal conductivity
• AlxGa1−xAsySb1−y: band structure
• AlxGa1−xAsySb1−y: effective mass parameters
• AlxGa1−xAsySb1−y: energy gaps
• AlxGa1−xAsySb1−y: elastic moduli
• AlxGa1−xAsySb1−y: dielectric constant
• AlxGa1−xAsySb1−y: photoluminescence, absorption coefficient
• AlxIn1−xAs: critical point energies
• AlxIn1−xAs: Raman data
• Al1−xMnxAs: crystal structure, lattice parameter
• Al1−xMnxAs: resistance
• Al1−xMnxAs: magnetic phases
• AlAsxSb1−x: thermal conductivity
• AlxGayIn1−x−yP: bond length
• AlxGa1−xP: lattice parameters
• AlxGa1−xP: critical point energies, interband transition energies
• AlxGa1−xP: electron self energy
• AlxGa1−xP: exciton energies
• AlxGa1−xP: bound exciton data
• AlxGa1−xP: photoluminescence spectra
• AlxGa1−xPySb1−y: elastic moduli
• AlxGa1−xPySb1−y: internal strain parameter
• AlxIn1−xPySb1−y: internal strain parameter
• AlxIn1−xPySb1−y: elastic moduli
• BxGa1−xAs: energy gaps, energy at symmetry points
• BxGa1−xAs: lattice parameter
• BxGa1−x−yInyAs: critical point energies
• BxGa1−x−yInyAs: electron effective mass
• BxGa1−x−yInyAs: energy gaps
• GaAs1−xBix: direct energy gap, intraband transition energies
• GaAs1−xBix: energy gaps, critical point energies
• GaAs1−xBix: spin orbit splitting energy
• GaAs1−xBix: spin orbit splitting energy
• BxIn1−xAs: lattice parameter
• Ga1−xCrxAs: crystal structure, lattice parameter
• Ga1−xCrxAs: conductivity, carrier concentration
• Ga1−xCrxAs: Curie temperature, magnetic circular dichroism
• Ga1−xFexAs: crystal structure, lattice parameter
• Ga1−xFexAs: conductivity, magnetoresistance
• Ga1−xFexAs: magnetization
• GaAs: heat capacity
• GaAs: spin-Hall conductivity, transversal spin drift velocity
• GaAs: phonon density of states
• GaAs: Debye temperatures
• GaAs: spin transport data, spin lifetime, spin drift velocity
• GaAs: photoemission data
• GaAs: radiative recombination coefficient
• GaxIn1−xAs: effective Landé g factors
• GaxIn1−xAs: electron effective mass
• GaxIn1−xAs: energy gaps
• GaxIn1−xAs: parameters of k·p models
• GaxIn1−xAs: critical point energies
• GaxIn1−xAs: phonon wave numbers
• GaxIn1−xAs: carrier lifetime
• GaxIn1−xAs: spin transport data
• GaxIn1−xAs: impact ionization rate
• GaxIn1−xAs: dielectric function
• GaxIn1−xAs: Auger recombination coefficient and lifetime
• GaxIn1−xAs: radiative recombination coefficients
• GaxIn1−xAsyP1−y: energy gaps
• GaxIn1−xAsyP1−y: energy gaps
• GaxIn1−xAsyP1−y: Auger recombination coefficient
• GaxIn1−xAsyP1−y: radiative recombination coefficients
• GaxIn1−xPySbzAs1−y−z: band structure, density of states
• GaxIn1−xPySbzAs1−y−z: energy gaps
• GaxIn1−xPySbzAs1−y−z: transverse effective charge, dielectric constants
• GaxIn1−xAsySb1−y: lattice constant
• GaxIn1−xAsySb1−y: thermal conductivity
• GaxIn1−xAsySb1−y: critical point energies
• GaxIn1−xAsySb1−y: energy gaps
• GaxIn1−xAsySb1−y: energy gap
• GaxIn1−xAsySb1−y: absorption coefficient
• GaxIn1−xAsySb1−y: absorption coefficient
• GaxIn1−xAsySb1−y: Auger recombination coefficient, nonradiative lifetime
• GaxIn1−xAsySb1−y: dielectric constant
• GaxIn1−xAsySb1−y: dielectric constant
• GaxIn1−xAsySb1−y: refractive index
• Ga1−xMnxAs: crystal structure, lattice parameter
• Ga1−xMnxAs: band structure, direct energy gap
• Ga1−xMnxAs: spin polarization
• Ga1−xMnxAs: conductivity, resistivity, magnetoresistance, Hall effect
• Ga1−xMnxAs: exchange integrals, Curie temperature, magnetic anisotropy
• Ga1−xMnxAs: magnetic circular dichroism, Verdet constant
• GaAs1−xSbx: direct energy gap, spin orbit splitting energy
• GaAsxSb1−x: energy gaps
• GaAsxSb1−x: photoluminescence
• GaAsxSb1−x: refractive index
• InAs: total energies, phase diagram
• InAs: band structure
• InAs: critical point energies
• InAs: Dresselhaus spin splitting parameter
• InAs: spin orbit splitting energies
• InAs: effective mass parameters
• InAs: energies at symmetry points
• InAs: effective Landé g factors
• InAs: interband transition energies
• InAs: energy gap
• InAs: phonon frequencies
• InAs: mobility
• InAs: electron spin lifetime
• InAs: drift velocity
• InAs: dielectric constant
• InAs: absorption coefficient, reflectivity
• InAs: extinction coefficient, refractive index
• InAs: higher order optical susceptibilities
• In1−xMnxAs: crystal structure, lattice parameter
• In1−xMnxAs: direct gap, effective masses
• In1−xMnxAs: conductivity, magnetoresistance, Hall resistivity
• In1−xMnxAs: carrier concentration, mobility
• In1−xMnxAs: magnetic circular dichroism
• In1−xMnxAs: magnetic phases, exchange integrals, Curie temperature, magnetic anisotropy
• InAsxSb1−x: critical point energies, broadening parameters
• InAsxSb1−x: energy gaps
• InxAs1−xSb: transverse effective charge
• InAsxSb1−x: sound velocities
• InAsxSb1−x: elastic moduli
• InAsxSb1−x: dielectric constant
• InBixSb1−x: transverse effective charge
• CuCl1−xBrx: phonon wavenumbers
• CuCl1−xBrx: electron mobility, drift velocity
• CuBr: p-T phase diagram, transition pressure
• CuBr: interionic distance
• CuBr: heat of sublimation
• γ-CuBr: biexciton and trion data
• γ-CuBr: deformation potentials
• γ-CuBr: energy gaps, exciton energies in dependence on temperature
• CuBr: elastic moduli, effective charges
• CuBr: Grüneisen parameters
• CuBr: phonon wavenumbers, damping constants, Grüneisen parameters
• CuBr: phonon dispersion curves, phonon density of states
• CuBr: lattice constants
• γ-CuBr: mean square relative displacements
• CuBr: bulk modulus
• γ-CuBr: ion transport properties
• γ-CuBr: electron mobility, drift velocity
• γ-CuBr: dielectric constants
• Hg1−x−y−zCdxMnyZnzTe: energy gap
• Hg1−x−y−zCdxMnyZnzTe: micro hardness
• Hg1−x−y−zCdxMnyZnzTe: intrinsic carrier concentration, conductivity, Hall coefficient, mobility
• Hg1−x−y−zCdxMnyZnzTe: activation energy
• Hg1−xCdxTe: activation energy
• Hg1−xCdxTe: mobility, carrier concentration
• Hg1−xCdxTe: free-carrier absorption
• Hg1−xCdxTe: luminescence, reflectance, absorption, and refractive index
• Hg1−xCdxTe: reflectance
• Hg1−xCdxTe: two-photon absorption constant
• CdO: band structure, density of states
• CdO: energy gaps
• CdO: mean inner potential
• CdO: photoconductivity, resistivity
• Zn1−xCdxO: energy gaps, dependence on temperature
• Zn1−xCdxO: resistivity
• CdS: phase transition, transition pressure
• CdS: exciton energies, exciton binding energies
• CdS: bound excitons
• CdS: defect formation energies
• CdS: resistivity
• CdS: conductivity, mobility
• CdSe: phase transition, transition pressure
• CdSe: energy gaps
• CdSe: dielectric constants
• CdSe: higher order optical susceptibilities
• Sn1−xCdxTe: hardness
• ZnxCd1−xS: energy gaps
• Cd1−xZnxS: resistivity
• CdTe: density of states
• CdTe: energy gaps, temperature dependence
• CdTe: band structure
• CdTe: impurity complexes
• CdTe: impurity complexes
• CdTe: ionization energies
• CdTe: ionization energies
• CdTe: bound excitons
• CdTe: donor-acceptor pairs, free-to-bound transitions
• CdTe: emission energies
• CdTe: bound excitons
• CdTe: Hall mobility
• CdTe: mobility
• CdTe: resistivity
• CdTe: conductivity, resistivity
• CdTe: dielectric constants
• CdTe: higher order optical susceptibilities
• Cd1−xZnxTe: enthalpy
• Cd1−xZnxTe: energy gaps
• Cd1−xZnxTe: donor acceptor pairs
• Cd1−xZnxTe: ionization energies
• Cd1−xZnxTe: resistivity, mobilities, Hall coefficient
• γ-CuCl: exciton energies
• γ-CuCl: phonon wavenumbers
• CuCl: mean square relative displacements
• CuCl: phonon dispersion
• CuCl: elastic moduli
• SiC: valence band offsets
• SiC: spontaneous polarization
• SiC: absorption coefficient
• SiC: Auger recombination coefficient
• SiC: exciton gap
• α-SiC: nonlinear optical coefficients
• SiC: refractive index
• CuF: heat of sublimation
• CuF: lattice constants
• CuI: phase transitions, p-T phase diagram
• CuI: heat of sublimation
• γ-CuI: biexciton and trion data
• γ-CuI: exciton energies
• CuI: force constants, elastic moduli, effective charges
• CuI: bulk modulus
• CuI: phonon dispersion
• γ-CuI: phonon wavenumbers
• CuI: lattice parameters
• CuI: mode Grüneisen parameters
• γ-CuI: mean square displacement
• CuI: ion diffusion coefficient
• γ-CuI: electron mobility, drift velocity
• GaxIn1−xP: elastic moduli
• GaxIn1−xP: transverse effective charge
• Ga1−xMnxSb: crystal structure
• Ga1−xMnxSb: conductivity, magnetoresistance, Hall resistivity
• Ga1−xMnxSb: Curie temperature, magnetic anisotropy
• GaP: phonon density of states
• Hg1−xMnxTe: energy gaps, effective masses
• Hg1−xMnxTe: ionization energies
• Hg1−xMnxTe: mobility, conductivity and Hall coefficient
• Hg1−xMnxTe: absorption, reflectivity
• HgS: point/space groups
• HgS: band structure, energy gaps
• HgS: energy gaps
• HgS: conductivity
• HgS: resistivity
• HgSe: band structure, electron density of states
• HgSe: transmittance
• HgTe: lattice parameters
• HgTe: point/space groups
• HgTe: band structure, density of states
• HgTe: conductivity, Hall coefficient
• HgTe: resisitivity, carrier mobility
• HgTe: Seebeck coefficient
• Hg1−xZnxTe: phonon frequencies
• Hg1−xZnxTe: reflectance
• In1−xMnxSb: crystal structure, lattice parameter
• In1−xMnxSb: spin polarization
• In1−xMnxSb: conductivity, Hall resistivity
• In1−xMnxSb: magnetic phases, Curie temperature, magnetic anisotropy
• InPxSb1−x: energy gaps
• InPxSb1−x: effective charges
• InPxSb1−x: phonon frequencies
• InPxSb1−x: dielectric constant
• InSb: interband transition energies
• InSb: spin orbit splittings
• InSb: Dresselhaus spin splitting parameter
• InSb: effective Landé g factors
• InSb: effective mass parameters
• InSb: energies at symmetry points
• InSb: band structure
• InSb: critical point energies
• InSb: spin transport data
• InSb: absorption coefficient, reflectivity
• InSb: Auger lifetime
• InSb: dielectric constant
• InSb: extinction coefficient, refractive index
• InSb: higher order optical susceptibilities
• MgyZn1−yTe1−xSex: energy gaps
• Zn1−xMgxTe: energy gaps, bowing parameter
• Zn1−xMgxSe: absorption
• ZnSe1−xOx: exciton energies, exciton binding energies
• ZnSxO1−x: energy gaps, bowing parameter
• ZnO: mean inner potential
• ZnO: dielectric constants
• ZnSe: phase transition, transition pressure
• ZnSe: spin-orbit splitting
• ZnSe: deformation potentials
• ZnSe: Compton profiles
• ZnSe: Compton scattering profiles
• ZnSe: bound exciton data
• ZnSe: bound excitons and electrons
• ZnSe: bound excitons
• ZnSe: deep impurities
• ZnSe: deep impurities, muonium data
• ZnSe: diffusion coefficient
• ZnSe: donor acceptor pairs
• ZnSe: donor acceptor pairs, free-to-bound transitions
• ZnSe: ionization and excitation energies
• ZnSe: ionization and excitation energies
• ZnSe: Hall mobility
• ZnSe: conductivity
• ZnSe: dielectric constants
• ZnSxSe1−x: energy gaps, bowing parameter
• ZnSxSe1−x: refractive index, dielectric constants
• ZnS1−xTex: bound excitons
• ZnS: phase transition, transition pressure
• ZnS: spin-orbit splitting
• ZnS: deep impurities, muonium data
• ZnS: ionization energies
• ZnS: resistivity
• ZnS: dielectric constants
• ZnS: dielectric constants
• ZnS: dielectric constants
• ZnTe: spin-orbit splitting
• ZnTe: bound excitons
• ZnTe: donor-acceptor-pairs
• ZnTe: ionization energies
• ZnTe: ionization energies
• ZnTe: diffusion coefficient
• ZnTe: resistivity
• ZnTe: thermoelectric power
• ZnTe: refractive index, dielectric constants