New Data and Updates for II-VI Compounds

• II-VI semimagnetic semiconductors: exchange constants
• diluted magnetic oxides: Curie temperature, magnetization
• Be1-x Mn x Te: hysteresis
• Be x Zn1-x O: lattice constant
• Be x Zn1-x O: energy gaps
• Hg1-x Cd x Te: phonon frequencies
• Hg1-x Cd x Te: reflectance, absorption
• Hg1-x Cd x Te: binding energies (impurities and defects)
• Cd1-x Mg x Se: exciton energies
• Cd1-x Mg x Se: conductivity, Hall mobility
• Cd1-x Mg x Se: refractive index, absorption, dielectric constants
• Cd1-x Mg x Te: critical point energies
• Cd1-x Mg x Te: dielectric constants
• Mg x Zn y Cd1-x-y Se: energy gaps
• CdO: transmission, photoemission data
• CdO: muonium data (impurities and defects)
• CdO: photoconductivity, resistivity
• CdO: thermoelectric power
• CdO: mobility, Hall mobility
• CdO x Te1-x : composition dependence of energy gap
• Zn x Cd1-x O: band offsets
• Zn1-x Cd x O: lattice constants
• Zn1-x Cd x O: energy gaps
• Zn1-x Cd x O: band offsets
• Zn1-x Cd x O: reflectance, absorption and photoluminescence
• CdS, zincblende configuration: band structure, energies at symmetry points, gap energies
• CdS, zincblende configuration: Luttinger parameters
• CdS: energy gaps
• CdS: exciton energies, exciton binding energies
• CdS: muonium data (impurities and defects)
• CdS: donor-acceptor pairs
• CdS: ionization energies (impurities and defects)
• CdS: bound excitons
• CdS: conductivity, resistivity
• CdS: absorption coefficient
• CdS: biexciton data
• CdS: nonlinear optical properties
• CdS: mobility
• CdS: defect formation energies
• CdS x Se1-x : band structure, bowing parameter
• CdS x Se1-x : absorption, refractive index
• CdS x Se1-x : exciton energy
• CdS x Se1-x : band offsets
• CdS x Se1-x : excitonic energy, dephasing time
• Zn x Cd1-x S y Se1-y : band structure, bowing parameter
• CdS x Te1-x : energy gaps, bowing parameter
• CdS x Te1-x : absorption, dielectric constant
• CdS x Te1-x : band offsets
• Zn x Cd1-x S: energy gaps
• Zn x Cd1-x S: conductivity, resistivity
• Zn x Cd1-x S: refractive index, dielectric constants
• Zn x Cd1-x S: mobility
• CdSe, zincblende configuration: band structure, energies at symmetry points, gap energies
• CdSe: Luttinger parameters
• CdSe, hexagonal modification: interband transition energies
• CdSe, hexagonal modification: energy gaps
• CdSe: exciton energies, exchange splitting
• CdSe: muonium data (impurities and defects)
• CdSe: conductivity, resistivity
• CdSe: mobilities
• CdSe: refractive index
• CdSe: dielectric constants
• CdSe: nonlinear absorption
• CdSe: spin-orbit splitting, crystal-field splitting
• CdSe: g values (impurities and defects)
• CdSe: electron and hole traps
• CdSe x Te1-x : energy gaps, bowing parameter, band offsets
• CdSe x Te1-x : resistivity
• CdSe x Te1-x : absorption, refractive index, dielectric constants
• CdSe x Te1-x : band offsets
• Zn x Cd1-x Se: energy gaps, g factor, splitting of exciton transitions
• Zn x Cd1-x Se: ionization energies, g values (impurities and defects)
• Zn x Cd1-x Se: refractive index
• CdTe, zincblende configuration: band structure, energies at symmetry points, gap energies
• CdTe: Luttinger parameters
• CdTe: energy gaps, temperature and pressure dependence
• CdTe: energies at symmetry points
• CdTe: critical point energies, temperature dependence
• CdTe: deformation potentials
• CdTe: exciton energies
• CdTe: ionization energies of shallow impurities
• CdTe: donor-acceptor-pairs
• CdTe: ionization energies of deep impurities
• CdTe: impurity complexes
• CdTe: defect formation energies, entropy of point defects, migration energy
• CdTe: bound excitons
• CdTe: conductivity, resistivity
• CdTe: mobility
• CdTe: carrier concentration, self-diffusion
• CdTe: thermoelectric power
• CdTe: refractive index
• CdTe: absorption
• CdTe: density
• CdTe: enthalpy, entropy
• CdTe: hardness
• CdTe: Debye temperature
• CdTe: effective Landé g factors
• CdTe: thermal conductivity
• CdTe: muonium data (impurities and defects)
• Cd x Zn1-x Te: energy gaps
• Cd x Zn1-x Te: ionization energies, free-to-bound transitions
• Cd x Zn1-x Te: conductivity, mobilities, diffusion coefficient
• Cd x Zn1-x Te: refractive index, absorption, dielectric constants
• Cd x Zn1-x Te: Gibbs energy, enthalpy
• Cd x Zn1-x Te: exciton energies
• Cd x Zn1-x Te: bound excitons
• Cd x Zn1-x Te: positron annihilation data at vacancy-impurity complexes (impurities and defects)
• Cd x Zn1-x Te: electron and hole traps
• Cd x Zn1-x Te: impurity complexes
• Cd x Zn1-x Te: segregation coefficients (impurities and defects)
• Zn1-x Co x O: Curie temperature, magnetization, exchange integral
• Zn1-x Cr x Se: Curie temperature
• Zn1-x Cr x Te: Curie temperatures
• HgSe: phonon dispersion curves, phonon density of states
• HgTe: band structure
• HgTe: energy gaps
• HgTe: deformation potentials
• HgTe: phonon dispersion curves, phonon density of states
• HgTe: lattice parameter
• HgTe: elastic coefficients
• Mg x Zn1-x O, hexagonal modification: energy gaps
• Mg x Zn1-x O, hexagonal modification: exciton energies
• Mg x Zn1-x O, hexagonal modification: effective-mass parameters
• Mg x Zn1-x O, hexagonal modification: lattice parameters, phonon wavenumbers
• Mg x Zn1-x O, hexagonal modification: refractive index, dielectric constants
• Mg x Zn1-x O, cubic modification: energy gaps
• Mg x Zn1-x O, cubic modification: phonon wavenumbers
• Mg x Zn1-x O, cubic modification: refractive index, dielectric constants
• Zn1-x Mg x S y Se1-y : energy gaps
• Zn1-x Mg x S y Se1-y : g values, impurity concentration
• Zn1-x Mg x S y Se1-y : refractive index
• Zn1-x Mg x S y Se1-y : electron and hole traps
• Zn1-x Mg x S: energy gap, effective-mass parameters
• Mg y Zn1-y Te1-x Se x : energy gaps
• Mg y Zn1-y Te1-x Se x : refractive index
• Zn1-x Mg x Se: energy gaps, effective-mass parameters
• Zn1-x Mg x Se: g factors, electron and hole trap data (impurities and defects)
• Zn1-x Mg x Se: conductivity, mobility
• Zn1-x Mg x Se: refractive index
• Zn1-x Mg x Se: nonlinear absorption
• Zn1-x Mg x Te: energy gap, bowing parameter
• Zn1-x Mg x Te: bound exciton data
• Zn1-x Mg x Te: resistivity
• Zn1-x Mg x Te: refractive index, dielectric constants
• Zn1-x Mg x Te: effective-mass parameters
• Zn1-x Mn x O: exchange constants
• Zn1-x Mn x Te: Curie temperature
• ZnS1-x O x : exciton energies
• ZnS1-x O x : entropy, enthalpy
• ZnS1-x O x : energy gaps, bowing parameter
• ZnS1-x O x : lattice constant, phonon frequencies
• ZnS1-x O x : absorption coefficient
• ZnSe1-x O x : energy gaps, bowing parameter
• ZnS x Se1-x : energy gaps, bowing parameter
• ZnS x Se1-x : g values (impurities and defects)
• ZnS x Se1-x : dielectric constants
• ZnS x Se1-x : entropy, enthalpy
• ZnS x Se1-x : ionization energies (impurities and defects)
• ZnS x Se1-x : effective-mass parameters
• ZnS x Se1-x : band offsets
• ZnS1-x Te x : energy gaps, bowing parameter
• ZnS1-x Te x : impurity transitions
• ZnS1-x Te x : dielectric constants
• ZnS1-x Te x : bound exciton data
• ZnS1-x Te x : band offsets
• ZnS, cubic modification: band structure, energies at symmetry points, gap energies
• ZnS: Luttinger parameters
• ZnS: exciton energy, binding energy, Zeeman splitting
• ZnS: biexciton data
• ZnS: energy gaps
• ZnS: exciton binding energies, absorption strength
• ZnS: ionization energies (impurities and defects)
• ZnS, cubic modification: heat conductivity
• ZnS: refractive index, absorption, dielectric constants
• ZnS: entropy and enthalpy
• ZnS, cubic modification: resistivity
• ZnSe1-x Te x : band gaps, bowing parameter
• ZnSe1-x Te x : bound exciton data
• ZnSe1-x Te x : hardness
• ZnSe1-x Te x : exciton energies
• ZnSe1-x Te x : band offsets
• ZnSe: band structure, energies at symmetry points, gap energies
• ZnSe: Luttinger parameters
• ZnSe: energy gaps, temperature and pressure dependence
• ZnSe: effective-mass parameters
• ZnSe: exciton energies, binding energy
• ZnSe: ionization and excitation energies of donors (impurities and defects)
• ZnSe: ionization and excitation energies of acceptors (impurities and defects)
• ZnSe: donor-acceptor pairs
• ZnSe: deep impurities, muonium data
• ZnSe: electron and hole traps, formation energies, deep impurities
• ZnSe: bound excitons
• ZnSe: heat conductivity
• ZnSe: resistivity
• ZnSe: mobilities
• ZnSe: refractive index, dielectric constants
• ZnSe: nonlinear optical properties
• ZnSe: heat capacity, enthalpy, entropy
• ZnSe: hardness
• ZnSe: shallow donor g values
• ZnSe: shallow acceptor g values
• ZnTe: band structure, energies at symmetry points, gap energies
• ZnTe: Luttinger parameters
• ZnTe: energy gaps, energies at symmetry points
• ZnTe: deformation potentials
• ZnTe: exciton energies, binding energies
• ZnTe: ionization energies of shallow donors
• ZnTe: donor-acceptor-pairs
• ZnTe: ionization energies and impurity transitions of deep donors
• ZnTe: impurity complexes, positron lifetime
• ZnTe: bound exciton data
• ZnTe: resistivity
• ZnTe: mobilities, diffusion constants
• ZnTe: refractive index, dielectric constants
• ZnTe: nonlinear optical properties
• ZnTe: heat capacity, thermodynamic functions
• ZnTe: Gibbs free energy
• ZnTe: hardness
• ZnTe: Debye temperature
• ZnTe: density
• ZnTe: spatial correlation (impurities and defects)
• ZnTe: melting point