Gallium arsenide (GaAs)

• GaAs, solubility of impurities
• GaAs, diffusion of impurities and defects, general
• GaAs, self-diffusion coefficients
• GaAs, impurity diffusion coefficients
• GaAs, diffusion of Zn in GaAs
• GaAs, vibrational modes of impurities and defects: isolated impurities
• GaAs, vibrational modes of impurities and defects: isotopic clusters
• GaAs, vibrational modes of impurities and defects: substitutional impurity complexes
• GaAs, vibrational modes of impurities and defects: lithium complexes
• GaAs, vibrational modes of impurities and defects: irradiation defects
• GaAs, calibration of local vibrational mode absorption lines
• GaAs, vibrational modes of impurities and defects: hydrogen complexes
• GaAs, shallow donors: chemical shifts, photoconductivity measurements and photoluminescence
• GaAs, binding energy of residual donors
• GaAs, bound exciton transition energies
• GaAs, shallow acceptors: ground state binding energies, general remarks
• GaAs, acceptor ground state binding energies
• GaAs, properties of acceptor excited states
• GaAs, energy splittings of excited acceptor states
• GaAs, transition energies of highly excited acceptor states
• GaAs, bound exciton lifetimes
• GaAs, shallow defects and impurity complexes: the 1.5040-1.5110 eV photoluminescence lines
• GaAs, shallow defects and impurity complexes: copper complexes
• GaAs, ESR data for shallow defects
• GaAs, heavy doping effects
• GaAs, intrinsic or unidentified deep defect states
• GaAs, electron traps (cross section not known)
• GaAs, electron traps (directly measured carrier cross sections)
• GaAs, hole traps (directly measured cross sections)
• GaAs, hole traps (cross section not measured)
• GaAs, radiation-induced deep defect states: electron traps induced by electron irradiation
• GaAs, radiation-induced deep defect states: hole traps induced by electron irradiation
• GaAs, electron traps induced by proton and heavy ion implantation
• GaAs, gallium vacancy
• GaAs, hole traps induced by proton and heavy ion implantation
• GaAs, low temperature grown GaAs
• GaAs, oxygen and hydrogen in GaAs
• GaAs, optical properties of deep defects, general remarks
• GaAs, photoluminescence bands
• GaAs, experimental results on the 0.67-0.68 eV photoluminescence band
• GaAs, experimental results on the 0.77-0.8 eV photoluminescence band
• GaAs, photoluminescence in n- and p-type GaAs
• GaAs, the EL2/As(Ga) defect
• GaAs, optical transitions in absorption related to the EL2 defect
• GaAs, optical bands related to the 78/203 meV acceptor
• GaAs, photoluminescence of low temperature grown GaAs
• GaAs, ESR, ENDOR, and ODMR data
• GaAs, properties of plastically deformed GaAs
• GaAs, properties of fast-electron-irradiated GaAs
• GaAs, energy levels of transition metal impurities
• GaAs, capture and emission data for transition metal impurities
• GaAs, excited states related to transition metal impurities
• GaAs, optical properties of isolated transition metal impurities
• GaAs, optical properties of transition metal impurity complexes
• GaAs, magnetic properties and ESR of transition metal impurities
• GaAs, magnetic properties of isolated, substitutional transition metal impurities
• GaAs, magnetic properties of transition metal complexes
• GaAs, properties of rare earth impurities