Impurities and Defects

• Introduction
• Trends of impurity and defect properties
• Measurement methods
• Symbols, abbreviations, conversion lists
• List of symbols
• Diamond (C)
• Silicon (Si)
• Germanium (Ge)
• Aluminum nitride (AlN), impurities and defects
• Aluminum arsenide (AlAs)
• Aluminum antimonide (AlSb)
• Boron nitride (BN)
• Boron phosphide (BP), deep defect states
• Gallium nitride (GaN)
• Gallium phosphide (GaP)
• Gallium arsenide (GaAs)
• Gallium antimonide (GaSb)
• Indium phosphide (InP)
• Indium arsenide (InAs)
• Indium antimonide (InSb)
• Silicon carbide (SiC)
• Indium arsenide phosphide (InAs(1-x)P(x)), solubility and diffusion of impurities
• Gallium arsenide phosphide (GaAs(1-x)P(x))
• Gallium arsenide antimonide (GaAs(1-x)Sb(x)), deep defect states
• Gallium aluminum arsenide (Ga(1-x)Al(x)As)
• Gallium aluminum antimonide (Ga(1-x)Al(x)Sb), deep defect states
• Gallium indium arsenide (Ga(1-x)In(x)As)
• Gallium indium phosphide (Ga(x)In(1-x)P)
• Gallium indium arsenide phosphide (Ga(x)In(1-x)As(y)P(1-y)), impurities and defects
• Gallium aluminum indium phosphide ((Ga(x)Al(1-x))(y)In(1-y)P), deep defects
• Indium gallium aluminum arsenide ((Ga(x)Al(1-x))(y)In(1-y)As), deep defects
• Gallium aluminum arsenide antimonide (Ga(x)Al(1-x)As(y)Sb(1-y)), deep defects