Springer Logo

GaxIn1–xP: transverse effective charge

Chapter Concepts

Substances /
Molecular Formulas 		GaxIn1–xP
Element Systems Ga-In-P
Properties transverse effective charge
Keywords GaxIn1–xP: transverse effective charge; physical property; semiconductor

Source

Title

GaxIn1–xP: transverse effective charge
In

Semiconductors - New Data and Updates for III-V, II-VI and I-VII Compounds
Author E. C. Fernandes da Silva
Affiliation
Laboratorio de Novos Materiais Semicondutores, Instituto de Fisica, Universidade de Sao Paulo, Rua de Matao, travessa R, 187, 05508-900, Butanta, Sao Paulo, Sao Paulo, Brazil
Part of Landolt-Börnstein - Group III Condensed Matter
Numerical Data and Functional Relationships in Science and Technology
Volume

44C: New Data and Updates for III-V, II-VI and I-VII Compounds
Edited by U. Rössler
Chapter-DOI 10.1007/978-3-540-92140-0_277
Book-DOI 10.1007/978-3-540-92140-0 (Volume in Bookshelf)

Cite as

RIS-Export Fernandes da Silva, E. C.: GaxIn1–xP: transverse effective charge. Rössler, U. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). Springer-Verlag Berlin Heidelberg, 2010. DOI: 10.1007/978-3-540-92140-0_277

Abstract

GaxIn1–xP: transverse effective charge in 'Semiconductors - New Data and Updates for III-V, II-VI and I-VII Compounds', part of 'Landolt-Börnstein - Group III Condensed Matter: Numerical Data and Functional Relationships in Science and Technology, Volume 44C: New Data and Updates for III-V, II-VI and I-VII Compounds'.
This document is part of Subvolume C ‘New Data and Updates for III-V, II-VI, I-VII Compounds’ of Volume 44 ‘Semiconductors’ of Landolt-Börnstein - Group III ‘Condensed Matter’. It deals with the transverse effective charge of GaxIn1–xP Contained Elements: Ga-In-P Parent documents: Landolt-Börnstein home Volume III/44C