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Hg1-xCdxTe: free-carrier absorption

Chapter Concepts

Substances /
Molecular Formulas
Hg1-xCdxTe
Element Systems Cd-Hg-Te
Properties free-carrier absorption
Keywords Hg1-xCdxTe: free-carrier absorption; physical property; semiconductor

Source

Title

Hg1-xCdxTe: free-carrier absorption

In

Semiconductors - New Data and Updates for III-V, II-VI and I-VII Compounds

Author J. Chu
Affiliation
Shanghai Institute of Technical Physics, CAS National Laboratory for Infrared Physics, 200083, Shanghai, China
Part of Landolt-Börnstein - Group III Condensed Matter
Numerical Data and Functional Relationships in Science and Technology
Volume

44C: New Data and Updates for III-V, II-VI and I-VII Compounds

Edited by U. Rössler
Chapter-DOI 10.1007/978-3-540-92140-0_204
Book-DOI 10.1007/978-3-540-92140-0 (Volume in Bookshelf)

Cite as

RIS-Export Chu, J.: Hg1-xCdxTe: free-carrier absorption. Rössler, U. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). Springer-Verlag Berlin Heidelberg, 2010. DOI: 10.1007/978-3-540-92140-0_204

Abstract

Hg1-xCdxTe: free-carrier absorption in 'Semiconductors - New Data and Updates for III-V, II-VI and I-VII Compounds', part of 'Landolt-Börnstein - Group III Condensed Matter: Numerical Data and Functional Relationships in Science and Technology, Volume 44C: New Data and Updates for III-V, II-VI and I-VII Compounds'.
This document is part of Subvolume C ‘New Data and Updates for III-V, II-VI, I-VII Compounds’ of Volume 44 ‘Semiconductors’ of Landolt-Börnstein - Group III ‘Condensed Matter’. It deals with the free-carrier absorption of Hg1-xCdxTe Contained Elements: Cd-Hg-Te Parent documents: Landolt-Börnstein home Volume III/44C