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> Energy levels and branching ratios for Si-26 (Silicon-26)
Energy levels and branching ratios for Si-26 (Silicon-26)
Chapter Concepts:
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Substances / Molecular Formulas | Si-26; |
|---|---|
| Element Systems | Si; |
| Properties | capture width; emission width; enhancement factor; excitation energy; half-life; isotopic spin; line width; nuclear energy level; nuclear level energy; orbital momentum; parity; radiative strength; spin; total angular momentum; |
| Keywords | Energy levels and branching ratios for Si-26 (Silicon-26); atomic number; atomic weight; branching ratios; center-of-mass frame; compound nucleus; energy levels; enhancement factor; excitation energy; excited states; final state; ground state; half-life; isotopic spin of the compound nucleus; nuclear states; orbital momentum; radiative strength; spin and parity; total radiative width; width of proton capture or emission; width of the state in the center-of-mass frame; |
| Substrates | proton; |
Cite as:
| RIS-Export | Sukhoruchkin, S.I., Soroko, Z.N.: Energy levels and branching ratios for Si-26 (Silicon-26). Schopper, H. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). Springer-Verlag Berlin Heidelberg, 2008. DOI: 10.1007/978-3-540-75278-3_77 |
|---|
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