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AlAs: energy gaps

Chapter Concepts

Element Systems Al-As
Properties band gap
Keywords Electronic properties; III-V compounds; energy gaps; semiconductors
Substrates III-V semiconductor

Source

Title

AlAs: energy gaps

In

Data extract from Landolt-Börnstein III/44A: Semiconductors – New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds

Author E.C. Fernandes da Silva
Affiliation
Laboratorio de Novos Materiais Semicondutores, Instituto de Fisica, Universidade de Sao Paulo, Rua do Matao, travessa R, 187, 05508-900 Butanta, Sao Paulo, SP, Brasil
Part of Landolt-Börnstein - Group III Condensed Matter
Numerical Data and Functional Relationships in Science and Technology
Volume

44A: New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds

Edited by U. Roessler
Chapter-DOI 10.1007/978-3-540-48529-2_65
Book-DOI 10.1007/978-3-540-48529-2 (Volume in Bookshelf)

Cite as

RIS-Export Fernandes da Silva, E.C.: AlAs: energy gaps. Roessler, U. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). Springer-Verlag Berlin Heidelberg, 2008. DOI: 10.1007/978-3-540-48529-2_65

Abstract

AlAs: energy gaps in 'Data extract from Landolt-Börnstein III/44A: Semiconductors – New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds', part of 'Landolt-Börnstein - Group III Condensed Matter: Numerical Data and Functional Relationships in Science and Technology, Volume 44A: New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds'.
This document is part of Volume 44 ‘Semiconductors’, Subvolume A ‘New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds’ of Landolt-Börnstein Group III ‘Condensed Matter’. It contains data on AlAs (aluminum arsenide), Element System Al-As. Related documents: Landolt-Börnstein Homepage Volume III/44A Volume III/44B Systematics of Semiconductor Data Index of Substances, List of Symbols and Abbreviations, Conversion factors