gallium phosphide (GaP), deep defects, general remarks
Chapter Concepts
|
Substances / Molecular Formulas |
GaP; Gallium Monophosphide; Gallium phosphide; Galliumphosphid; gallium phosphide |
|---|---|
| Element Systems | Ga-P |
|
CAS Registry Numbers |
12063-98-8 |
| Properties | defect state |
| Keywords | deep defect |
| Substrates | III-V semiconductor; IV-IV semiconductor |
Source
| Title | gallium phosphide (GaP), deep defects, general remarks |
|---|---|
| Author | Collaboration: Authors and Editors of the LB Volumes III/22B-41A2b |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41A2b: Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10860305_49 |
| Book-DOI | 10.1007/b83098 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and Editors of the LB Volumes III/22B-41A2b: gallium phosphide (GaP), deep defects, general remarks. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10860305_49 |
|---|
Abstract
| This document is part of Subvolume A2b ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. | |
| Ga-P: Gallium phosphide (GaP) |
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