gallium aluminum arsenide (Ga(1-x)Al(x)As), deep defects
Chapter Concepts
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Substances / Molecular Formulas |
Ga1-xAlxAs; gallium aluminum arsenide (Ga(1-x)Al(x)As) |
|---|---|
| Element Systems | Al-As-Ga |
| Properties | defect state; impurity state |
| Keywords | deep defect |
| Substrates | III-V semiconductor; IV-IV semiconductor |
Source
| Title | gallium aluminum arsenide (Ga(1-x)Al(x)As), deep defects |
|---|---|
| Author | Collaboration: Authors and Editors of the LB Volumes III/22B-41A2b |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41A2b: Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10860305_186 |
| Book-DOI | 10.1007/b83098 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and Editors of the LB Volumes III/22B-41A2b: gallium aluminum arsenide (Ga(1-x)Al(x)As), deep defects. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10860305_186 |
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Abstract
| This document is part of Subvolume A2b ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. | |
| gallium aluminum arsenide (Ga(1-x)Al(x)As): deep defects |
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