silicon carbide (SiC), optical properties of impurities and other defects associated with radiation damage, misc. defects
Chapter Concepts
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Substances / Molecular Formulas |
100FT; 37C150; A 20; A 20 (carbide); Annanox CK; BSC 059; Betarundum; Betarundum ST-S; Betarundum UF; Betarundum Ultrafine; CP 240; CP 400; CSi; Carbofrax M; Carbogran F 180; Carbogran F 36; Carbogran F 80; Carbogran UF 15; Carbogran UF 45; Carbon silicide; Carborundum; Crystar; Crystolon 37; Crystolon 39; Crystolon B; DU-A 1; DU-A 2; DU-A 3; DU-A 3C; DU-A 4; Densic 120; Densic 180; Densic 220; Densic 60; Densic 80; Densic C 150; Densic C 500; Densic C 600; Densic RC 31; F 120; F 20; F 20 (abrasive); F 500; FCP 13NLC; FCP 15; GC 10000; GMF 6S; GP 600; GP 600 (abrasive); Green Densic; Green Densic GC 800; SiC; Silica graphite; Siliciumcarbid; Silicon carbide α; Silicon carbide β; Silicon carbide (SiC); Silicon carbide SiC; Silicon carbide whiskers; silicon carbide; silicon carbide (SiC) |
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| Element Systems | C-Si |
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CAS Registry Numbers |
12504-67-5; 409-21-2 |
| Properties | defect; defect state; optical properties; refractive index |
| Keywords | defect; impurities; radiation damage |
| Substrates | III-V semiconductor; IV-IV semiconductor |
Source
| Title | silicon carbide (SiC), optical properties of impurities and other defects associated with radiation damage, misc. defects |
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| Author | Collaboration: Authors and Editors of the LB Volumes III/22B-41A2b |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41A2b: Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10860305_15 |
| Book-DOI | 10.1007/b83098 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and Editors of the LB Volumes III/22B-41A2b: silicon carbide (SiC), optical properties of impurities and other defects associated with radiation damage, misc. defects. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10860305_15 |
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Abstract
| This document is part of Subvolume A2b ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. | |
| silicon carbide (SiC): optical properties of impurities and other defects associated with radiation damage, misc. defects |
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