Gallium nitride (GaN), Debye temperature, melting point, density
Chapter Concepts
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Substances / Molecular Formulas |
GaN; Gallium Mononitride; Gallium mononitride; Gallium nitride; Gallium nitride, GaN; Gallium(III) nitride; Galliumnitrid; gallium (III) nitride |
|---|---|
| Element Systems | Ga-N |
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CAS Registry Numbers |
12024-03-2; 25617-97-4 |
| Properties | Debye temperature; density; melting point |
| Substrates | III-V semiconductor; IV-IV semiconductor; group IV elemental semiconductor; solid solution |
Source
| Title | Gallium nitride (GaN), Debye temperature, melting point, density |
|---|---|
| Author | Collaboration: Authors and Editors of the LB Volumes III/17A-22A-41A1b |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41A1b: Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10832182_132 |
| Book-DOI | 10.1007/b80447 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and Editors of the LB Volumes III/17A-22A-41A1b: Gallium nitride (GaN), Debye temperature, melting point, density. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10832182_132 |
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Abstract
| This document is part of Subvolume A1b ‘Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties‘ of Volume 41 ‘Semiconductors‘ of Landolt-Börnstein - Group III Condensed Matter. | |
| Gallium nitride (GaN): Debye temperature, melting point, density |
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