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Zinc silicon arsenide (ZnSiAs2) interband and intraband transitions

Chapter Concepts

Substances /
Molecular Formulas
As2SiZn; Zinc silicon arsenide; Zinc silicon arsenide (ZnSiAs2); Zinc silicon arsenide (ZnSiAs2); ZnSiAs2
Element Systems As-Si-Zn
Properties band gap; band structure; crystal structure; dielectric constant; effective mass; energy gap; impurity state; interband transition; intraband transition; mobility
Substrates organic semiconductor; ternary compound semiconductor

Source

Title

Zinc silicon arsenide (ZnSiAs2) interband and intraband transitions

Author Collaboration: Authors and editors of the volumes III/17H-17I-41E
Part of Landolt-Börnstein - Group III Condensed Matter
Numerical Data and Functional Relationships in Science and Technology
Volume

41E: Ternary Compounds, Organic Semiconductors

Edited by O. Madelung, U. Rössler, M. Schulz
Chapter-DOI 10.1007/10717201_427
Book-DOI 10.1007/b72741 (Volume in Bookshelf)

Cite as

RIS-Export Collaboration: Authors and editors of the volumes III/17H-17I-41E: Zinc silicon arsenide (ZnSiAs2) interband and intraband transitions. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10717201_427

Abstract

This document is part of Subvolume E ‘Ternary Compounds, Organic Semiconductors’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.
Zinc silicon arsenide (ZnSiAs2): interband and intraband transitions