Cu4Ge3S5, Cu4Ge3Se5 and Cu4Sn3Se5 crystal structure, physical properties
Chapter Concepts
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Substances / Molecular Formulas |
Cu4Ge3S5, Cu4Ge3Se5 and Cu4Sn3Se5; Cu4Ge3S5; Cu4Ge3Se5; Cu4Se5Sn3; Cu4Sn3Se5 |
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| Element Systems | Cu-Ge-S; Cu-Ge-Se; Cu-Se-Sn |
| Properties | band gap; band structure; crystal structure; dielectric constant; effective mass; energy gap; impurity state; mobility; physical properties |
| Substrates | organic semiconductor; ternary compound semiconductor |
Source
| Title | Cu4Ge3S5, Cu4Ge3Se5 and Cu4Sn3Se5 crystal structure, physical properties |
|---|---|
| Author | Collaboration: Authors and editors of the volumes III/17H-17I-41E |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41E: Ternary Compounds, Organic Semiconductors |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10717201_156 |
| Book-DOI | 10.1007/b72741 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and editors of the volumes III/17H-17I-41E: Cu4Ge3S5, Cu4Ge3Se5 and Cu4Sn3Se5 crystal structure, physical properties. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10717201_156 |
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Abstract
| This document is part of Subvolume E ‘Ternary Compounds, Organic Semiconductors’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. | |
| Cu4Ge3S5, Cu4Ge3Se5: and Cu4Sn3Se5 crystal structure, physical properties |
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