(Transition metal)-V-VI compounds: crystallographic data for the arsenopyrite-type compounds
Chapter Concepts
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Substances / Molecular Formulas |
(Transition metal)-V-VI compounds |
|---|---|
| Element Systems | Transitionmetal-V-VIcompounds |
| Properties | band gap; band structure; crystal structure; crystallographic data; dielectric constant; effective mass; energy gap; impurity state; mobility |
| Substrates | arsenopyrite-type compound; non-tetrahedrally bonded binary compound semiconductor |
Source
| Title | (Transition metal)-V-VI compounds: crystallographic data for the arsenopyrite-type compounds |
|---|---|
| Author | Collaboration: Authors and editors of the volumes III/17G-41D |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41D: Non-Tetrahedrally Bonded Binary Compounds II |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10681735_256 |
| Book-DOI | 10.1007/b71139 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and editors of the volumes III/17G-41D: (Transition metal)-V-VI compounds: crystallographic data for the arsenopyrite-type compounds. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10681735_256 |
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Abstract
| This document is part of Subvolume D ‘Non-Tetrahedrally Bonded Binary Compounds II’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. | |
| (Transition metal)-V-VI compounds: crystallographic data for the arsenopyrite-type compounds |
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