Ru2Sn3: physical properties
Chapter Concepts
|
Substances / Molecular Formulas |
Ru2Sn3; Ru2Sn3 |
|---|---|
| Element Systems | Ru-Sn |
| Properties | band gap; band structure; crystal structure; dielectric constant; effective mass; energy gap; impurity state; mobility; physical properties |
| Substrates | non-tetrahedrally bonded binary compound semiconductor |
Source
| Title | Ru2Sn3: physical properties |
|---|---|
| Author | Collaboration: Authors and editors of the volumes III/17G-41D |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41D: Non-Tetrahedrally Bonded Binary Compounds II |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10681735_234 |
| Book-DOI | 10.1007/b71139 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and editors of the volumes III/17G-41D: Ru2Sn3: physical properties. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10681735_234 |
|---|
Abstract
| This document is part of Subvolume D ‘Non-Tetrahedrally Bonded Binary Compounds II’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. | |
| Ru2Sn3: physical properties |
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