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Ru2Ge3: crystal structure, chemical bond of Ru(n)Ge(2n-m) compounds

Chapter Concepts

Substances /
Molecular Formulas
Ge3Ru2; Ru2Ge3; Ru2Ge3; RunGe2n-m
Element Systems Ge-Ru
Properties band gap; band structure; chemical bond; crystal structure; dielectric constant; effective mass; energy gap; impurity state; mobility
Substrates Ru(n)Ge(2n-m) compounds; non-tetrahedrally bonded binary compound semiconductor

Source

Title

Ru2Ge3: crystal structure, chemical bond of Ru(n)Ge(2n-m) compounds

Author Collaboration: Authors and editors of the volumes III/17G-41D
Part of Landolt-Börnstein - Group III Condensed Matter
Numerical Data and Functional Relationships in Science and Technology
Volume

41D: Non-Tetrahedrally Bonded Binary Compounds II

Edited by O. Madelung, U. Rössler, M. Schulz
Chapter-DOI 10.1007/10681735_232
Book-DOI 10.1007/b71139 (Volume in Bookshelf)

Cite as

RIS-Export Collaboration: Authors and editors of the volumes III/17G-41D: Ru2Ge3: crystal structure, chemical bond of Ru(n)Ge(2n-m) compounds. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10681735_232

Abstract

This document is part of Subvolume D ‘Non-Tetrahedrally Bonded Binary Compounds II’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.
Ru2Ge3: crystal structure, chemical bond of Ru(n)Ge(2n-m) compounds