Ti2O3: properties of doped Ti2O3
Chapter Concepts
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Substances / Molecular Formulas |
C.I. 77892; Dititanium Trioxide; O3Ti2; Ti2O3; Ti2O3 ; Ti2O3; Titan(III)-oxid; Titanium oxide (Ti2O3); Titanium oxide (TiO1.5); Titanium sesquioxide; titanium (III) oxide |
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| Element Systems | O-Sc-Ti; O-Ti; O-Ti-V |
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CAS Registry Numbers |
1344-54-3; 154909-47-4 |
| Properties | band gap; band structure; crystal structure; dielectric constant; effective mass; energy gap; impurity state; mobility |
| Substrates | doped Ti2O3; non-tetrahedrally bonded binary compound semiconductor |
Source
| Title | Ti2O3: properties of doped Ti2O3 |
|---|---|
| Author | Collaboration: Authors and editors of the volumes III/17G-41D |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41D: Non-Tetrahedrally Bonded Binary Compounds II |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10681735_188 |
| Book-DOI | 10.1007/b71139 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and editors of the volumes III/17G-41D: Ti2O3: properties of doped Ti2O3. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10681735_188 |
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Abstract
| This document is part of Subvolume D ‘Non-Tetrahedrally Bonded Binary Compounds II’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. | |
| Ti2O3: properties of doped Ti2O3 |
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