TlInS2 lattice properties
Chapter Concepts
|
Substances / Molecular Formulas |
InS2Tl; TlInS2; TlInS2 |
|---|---|
| Element Systems | In-S-Tl |
| Properties | band gap; band structure; crystal structure; dielectric constant; effective mass; energy gap; impurity state; lattice properties; mobility |
| Substrates | non-tetrahedrally bonded binary compound semiconductor; non-tetrahedrally bonded elemental semiconductor |
Source
| Title | TlInS2 lattice properties |
|---|---|
| Author | Collaboration: Authors and editors of the volumes III/17E-17F-41C |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41C: Non-Tetrahedrally Bonded Elements and Binary Compounds I |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10681727_416 |
| Book-DOI | 10.1007/b71138 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and editors of the volumes III/17E-17F-41C: TlInS2 lattice properties. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10681727_416 |
|---|
Abstract
| This document is part of Subvolume C ‘Non-Tetrahedrally Bonded Elements and Binary Compounds I’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. | |
| TlInS2: lattice properties |
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