Bismuth triiodide (BiI3) vapor pressure, parameters of fusion and vaporization
Chapter Concepts
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Substances / Molecular Formulas |
BiI3; Bismut(III)-iodid; Bismuth Tri-Iodide; Bismuth iodide; Bismuth iodide (BiI3); Bismuth iodide, BiI3; Bismuth triiodide; Bismuth triiodide (BiI3); Bismuth(III) iodide; Bismuthine, triiodo-; Triiodobismuth; Wismut(III)jodid; Wismuttrijodid; bismuth (III) iodide |
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| Element Systems | Bi-I |
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CAS Registry Numbers |
12262-07-6; 7787-64-6 |
| Properties | band gap; band structure; crystal structure; dielectric constant; effective mass; energy gap; fusion parameter; impurity state; mobility; vapor pressure; vaporization parameter |
| Substrates | non-tetrahedrally bonded binary compound semiconductor; non-tetrahedrally bonded elemental semiconductor |
Source
| Title | Bismuth triiodide (BiI3) vapor pressure, parameters of fusion and vaporization |
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| Author | Collaboration: Authors and editors of the volumes III/17E-17F-41C |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41C: Non-Tetrahedrally Bonded Elements and Binary Compounds I |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10681727_1087 |
| Book-DOI | 10.1007/b71138 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and editors of the volumes III/17E-17F-41C: Bismuth triiodide (BiI3) vapor pressure, parameters of fusion and vaporization. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10681727_1087 |
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Abstract
| This document is part of Subvolume C ‘Non-Tetrahedrally Bonded Elements and Binary Compounds I’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. | |
| Bismuth triiodide (BiI3): vapor pressure, parameters of fusion and vaporization |
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