ZnSe(x)Te(1-x) impurities and defects
Chapter Concepts
|
Substances / Molecular Formulas |
ZnSe(x)Te(1-x); ZnSexTe1-x |
|---|---|
| Element Systems | Se-Te-Zn |
| Properties | band gap; band structure; crystal structure; dielectric constant; effective mass; energy gap; impurity state; mobility |
| Keywords | II-VI and I-VII Compounds; Semimagnetic Compounds; Semiconductors; defect; impurities; introduction |
| Substrates | I-VII semiconductor; II-VI semiconductor |
Source
| Title | ZnSe(x)Te(1-x) impurities and defects |
|---|---|
| Author | Collaboration: Authors and editors of the volumes III/17B-22A-41B |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41B: II-VI and I-VII Compounds; Semimagnetic Compounds |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10681719_694 |
| Book-DOI | 10.1007/b71137 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and editors of the volumes III/17B-22A-41B: ZnSe(x)Te(1-x) impurities and defects. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10681719_694 |
|---|
Abstract
| This document is part of Subvolume B ‘II-VI and I-VII Compounds; Semimagnetic Compounds’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. | |
| ZnSe(x)Te(1-x): impurities and defects |
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