Introduction
Chapter Concepts
| Properties | defect; defect concentration; defect state; impurity data; impurity diffusion; impurity state |
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| Keywords | introduction |
| Substrates | group IV elemental semiconductor |
Source
| Title | Introduction |
|---|---|
| Author | Collaboration: Authors and Editors of the volumes III/22b-41A2a |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 41A2a: Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements |
| Edited by | O. Madelung, U. Rössler, M. Schulz |
| Chapter-DOI | 10.1007/10681604_1 |
| Book-DOI | 10.1007/b71128 (Volume in Bookshelf) |
Cite as
| RIS-Export | Collaboration: Authors and Editors of the volumes III/22b-41A2a: Introduction. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10681604_1 |
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Abstract
| This document is part of Subvolume A2a ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter. |
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