8.1.1.3 Surface ellipsometry
Chapter Concepts
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Substances / Molecular Formulas |
Si(111)7x7 |
|---|---|
| Element Systems | Si; Si (Silicium); Si (Silicon) |
| Properties | crystal structure; lattice parameter; photoemission spectrum; radiation; scanning tunneling microscopy image; surface structure; x-ray diffraction |
| Keywords | electron tunneling; introduction; surface |
Source
| Title | 8.1.1.3 Surface ellipsometry |
|---|---|
| In | 8.1.1 Introduction |
| Author | P. Chiaradia |
| Part of | Landolt-Börnstein - Group III Condensed Matter |
| Numerical Data and Functional Relationships in Science and Technology | |
| Volume | 24D: Interaction of Radiation with Surfaces and Electron Tunneling |
| Edited by | G. Chiarotti |
| Chapter-DOI | 10.1007/10119615_9 |
| Book-DOI | 10.1007/b51875 (Volume in Bookshelf) |
Cite as
| RIS-Export | Chiaradia, P.: 8.1.1.3 Surface ellipsometry. Chiarotti, G. (ed.). SpringerMaterials - The Landolt-Börnstein Database (http://www.springermaterials.com). DOI: 10.1007/10119615_9 |
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Abstract
| 8.1.1.3 Surface ellipsometry in '8.1.1 Introduction', part of 'Landolt-Börnstein - Group III Condensed Matter: Numerical Data and Functional Relationships in Science and Technology, Volume 24D: Interaction of Radiation with Surfaces and Electron Tunneling'. | |
| This chapter deals with surface ellipsometry which measures changes in the polarization parameters of light reflected from a surface. These parameters are: the relative phase Δ and the amplitude ratio tanΨ of the two components of linearly polarized light, parallel and perpendicular to the plane of incidence. When surface properties are studied by ellipsometry, a differential method has to be used, as in the case of Differential Reflectivity. Ellipsometric raw data for oxygen adsorption on Si(111)7·7 as a function of wavelength is illustrated. The surface optical constants and imaginary part of the surface dielectric function are also shown. Ellipsometry has been applied to derive the surface optical constants of a number of clean semiconductor surfaces, namely various crystallographic faces of Si and Ge as well as the cleavage faces of GaP, GaAs and ZnO. |
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